
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
2
TVS Diode Arrays (SPA
®
Diodes)
Revision: November 29, 2012
SP6003 Series
ESD and EMI Filter Devices - SP6003 Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
T
OP
Operating Temperature -40 to 125 °C
T
STOR
Storage Temperature -55 to 150 °C
Thermal Information
Parameter Rating Units
Storage Temperature Range -55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 10s) 260 °C
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
5.0 V
Breakdown Voltage V
BR
I
R
=1mA 7. 0 V
Reverse Leakage Current I
LEAK
V
RWM
=5V 0.1 1. 0 µA
Resistance R
A
I
R
=10mA 80 100 120 Ω
Diode Capacitance
1,2
C
D
V
R
=2.5V,f=1MHz 7 pF
Line Capacitance
1,2
C
L
V
R
=2.5V,f=1MHz 11 14 17 pF
ESD Withstand Voltage
1
V
ESD
IEC61000-4-2 (Contact Discharge) ±12 kV
IEC61000-4-2 (Air Discharge) ±15 kV
Cutoff Frequency
3
F
-3dB
Above this frequency, appreciable
attenutation occurs
250 MHz
Notes:
1
Parameter is guaranteed by design and/or device characterization.
2
Total line capacitance is two times the diode capacitance (C
D
).
3
50Ω source and 50Ω load termination
Analog Crosstalk (S41)Insertion Loss (S21)
10 1001000
Frequency (MHz)
-50
-40
-30
-35
-45
-20
-25
-10
-5
0
-15
Attenuation (dB)
10 1001000
Frequency (MHz)
-120
-90
-105
-135
-60
-75
-30
-15
0
-45
Attenuation (dB)
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